AO4612 Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AO4612 60V Complementary Enhancement Mode Field Effect Transistor.

n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.5V) 100% Rg tested SOIC-8 Top View Bottom View D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed.

Brand Logo	Part Number	Description	Manufacturer
	AO4612	Dual-Channel MOSFET	VBsemi