AO4613 Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4613 Complementary Enhancement Mode Field Effect Transistor General.

Datasheet Details

The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

It is ESD protected.

n-channel p-channel VDS (V) = 30V -30V -6.1A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 G1 www. DataSheet4U. com S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Curr.

Brand Logo	Part Number	Description	Manufacturer
	AO4613	N- and P-Channel 30V MOSFET	VBsemi