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AO4615 Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

It is ESD protected.

Overview

AO4615 Complementary Enhancement Mode Field Effect Transistor General.

Key Features

  • n-channel p-channel VDS (V) = 30V -30V -5.7A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 39m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 62m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) P-channel MOSFET has an additional ROC < 1MΩ for open circuit protection. D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 ROC S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Volta.