Datasheet Details
| Part number | AO4616 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 378.64 KB |
| Description | 30V Complementary MOSFET |
| Download | AO4616 Download (PDF) |
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Overview: AO4616 30V Complementary MOSFET General.
| Part number | AO4616 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 378.64 KB |
| Description | 30V Complementary MOSFET |
| Download | AO4616 Download (PDF) |
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|
|
Product Summary The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested ESD Protected P-Channel -30V -7A (VGS=-10V) RDS(ON) < 22mΩ (VGS=-10V) < 40mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View D2 D1 S2 D2 G2 D2 G2 S1 D1 G1 D1 G1 S2 S1 Pin1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR 8 6.5 40 19 18 -7 -6 -40 27 36 TA=25°C Power Dissipation B TA=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max Units 62.5 °C/W 90 °C/W 40 °C/W Rev 2: Jan.
| Part Number | Description |
|---|---|
| AO4610 | MOSFET |
| AO4611 | MOSFET |
| AO4612 | MOSFET |
| AO4613 | MOSFET |
| AO4614 | MOSFET |
| AO4614A | MOSFET |
| AO4615 | MOSFET |
| AO4617 | MOSFET |
| AO4618 | 40V Complementary MOSFET |
| AO4619 | MOSFET |