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Alpha & Omega Semiconductors

AO4616 Datasheet Preview

AO4616 Datasheet

30V Complementary MOSFET

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AO4616
30V Complementary MOSFET
General Description
Product Summary
The AO4616 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
N-Channel
VDS= 30V
ID= 8A (VGS=10V)
RDS(ON)
< 20m(VGS=10V)
< 28m(VGS=4.5V)
100% UIS Tested
100% Rg Tested
ESD Protected
P-Channel
-30V
-7A (VGS=-10V)
RDS(ON)
< 22m(VGS=-10V)
< 40m(VGS=-4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
D2 D1
S2 D2
G2 D2
G2
S1 D1
G1 D1
G1
S2 S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
8
6.5
40
19
18
-7
-6
-40
27
36
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
Units
62.5
°C/W
90 °C/W
40 °C/W
Rev 2: Jan. 2011
www.aosmd.com
Page 1 of 9




Alpha & Omega Semiconductors

AO4616 Datasheet Preview

AO4616 Datasheet

30V Complementary MOSFET

No Preview Available !

AO4616
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=6A
VDS=5V, ID=8A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.2
40
1.8
16.5
23
19.5
30
0.75
1
5
10
2.4
20
28
28
1
2.5
V
µA
µA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
600 740 888
77 110 145
50 82 115
0.5 1.1 1.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12 15 18
nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=8A
6 7.5 9
2.5
nC
nC
Qgd Gate Drain Charge
3 nC
tD(on)
Turn-On DelayTime
5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
19 ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
6 8 10 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14 18 22
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jan. 2011
www.aosmd.com
Page 2 of 9


Part Number AO4616
Description 30V Complementary MOSFET
Maker Alpha & Omega Semiconductors
Total Page 9 Pages
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