Datasheet4U Logo Datasheet4U.com

AO4619 - MOSFET

General Description

The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in inverter and other applications.

📥 Download Datasheet

Full PDF Text Transcription for AO4619 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO4619. For precise diagrams, and layout, please refer to the original PDF.

AO4619 Complementary Enhancement Mode Field Effect Transistor General Description The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low ...

View more extracted text
vanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Product Summary N-Channel VDS (V) = 30V ID = 7.4A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) P-Channel -30V -5.2A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) < 72mΩ (VGS = -4.

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AO4610 MOSFET
AO4611 MOSFET
AO4612 MOSFET
AO4613 MOSFET
AO4614 MOSFET
AO4614A MOSFET
AO4615 MOSFET
AO4616 30V Complementary MOSFET
AO4617 MOSFET
AO4618 40V Complementary MOSFET