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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4625 Datasheet Preview

AO4625 Datasheet

Complementary Enhancement Mode Field Effect Transistor

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AO4625 pdf
AO4625
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4625 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
power inverters, and other
applications.Standard Product AO4625 is Pb-
free (meets ROHS & Sony 259
specifications). AO4625L is a Green Product
ordering option. AO4625 and AO4625L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 6.9A (VGS=10V) -5.4A (VGS = -10V)
RDS(ON)
RDS(ON)
< 28m(VGS=10V) < 45m(VGS = -10V)
< 42m(VGS=4.5V) < 75m(VGS = -4.5V)
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S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
6.9
5.8
30
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.44
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-5.4
-4.6
-20
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4625 Datasheet Preview

AO4625 Datasheet

Complementary Enhancement Mode Field Effect Transistor

No Preview Available !

AO4625 pdf
AO4625
N-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250μA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
VGS=4.5V, ID=5.0A
Forward Transconductance
VDS=5V, ID=6.9A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1
30
10
0.004
1.86
1
5
100
3
22.5
31.3
34.5
15.4
0.76
28
38
42
1
3
V
μA
nA
V
A
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 820
102
77
3 4.5
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=6.9A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.2Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/μs
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/μs
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
17
8.1
20
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0: Apr. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Part Number AO4625
Description Complementary Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 7 Pages
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