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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4701 Datasheet Preview

AO4701 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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AO4701 pdf
July 2001
AO4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4701 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
Features
VDS (V) = -30V
ID = -5A
RDS(ON) < 49m(VGS = 10V)
RDS(ON) < 64m(VGS = 4.5V)
RDS(ON) < 120m(VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
A 18K
A 27K
S 36D
G 45D
SOIC-8
G
www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Typ
48
74
35
49
72
37
Schottky
30
4.4
3.2
30
2
1.44
-55 to 150
Max
62.5
110
40
62.5
110
42
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4701 Datasheet Preview

AO4701 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AO4701 pdf
AO4701
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-5A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=3.6,
RGEN=6
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
Irm Maximum reverse leakage current
CT Junction Capacitance
IF=1.0A
VR=30V
VR=30V, TJ=125°C
VR=30V, TJ=150°C
VR=15V
Min
-30
-0.7
-25
7
Typ Max Units
-1
-5
±100
-1 -1.3
42.5
54
83
11
-0.75
49
74
64
120
-1
-3
V
µA
nA
V
A
m
m
m
S
V
A
952 pF
103 pF
77 pF
5.9
9.5 nC
2 nC
3.1 nC
12 ns
4 ns
37 ns
12 ns
21 ns
13 nC
0.45
0.007
3.2
12
37
0.5
0.05
10
20
V
mA
pF
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA
id i l l ti
Alpha & Omega Semiconductor, Ltd.


Part Number AO4701
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 8 Pages
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