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AO4707 - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

The AO4707 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters.

Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V).

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Datasheet preview – AO4707

Datasheet Details

Part number AO4707
Manufacturer Alpha & Omega Semiconductors
File Size 218.76 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO4707 Datasheet
Additional preview pages of the AO4707 datasheet.

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Full PDF Text Transcription

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AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4707 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications). AO8820L is a Green Product ordering option. AO8820 and AO8820L are electrically identical. A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G S A Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.52V@3A D K SOIC-8 www.DataSheet4U.
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