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AO4708 Datasheet 30V N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

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General Description

SRFET TM AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Product Summary VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 8.7mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B IDSM IDM IAR EAR Power DissipationA TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 15 12 80 25 94 3.1 2.0 -55 to 150 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Units V V A A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.

Overview

AO4708 30V N-Channel MOSFET SRFET TM General.

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