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AO4709 - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

The AO4709 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of nonsynchronous DC-DC converters.

Standard Product AO4709 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V).

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Datasheet preview – AO4709

Datasheet Details

Part number AO4709
Manufacturer Alpha & Omega Semiconductors
File Size 222.13 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO4709 Datasheet
Additional preview pages of the AO4709 datasheet.

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AO4709 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4709 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of nonsynchronous DC-DC converters. Standard Product AO4709 is Pb-free (meets ROHS & Sony 259 specifications). AO4709L is a Green Product ordering option. AO4709 and AO4709L are electrically identical. Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) SCHOTTKY VDS (V) = 30V,IF = 3A, VF<0.5V@1A A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G D K SOIC-8 S A www.DataSheet4U.
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