Datasheet Details
| Part number | AO4805 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 291.51 KB |
| Description | 30V Dual P-Channel MOSFET |
| Datasheet | AO4805_ETC.pdf |
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Overview: AO4805 30V Dual P-Channel MOSFET General.
| Part number | AO4805 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 291.51 KB |
| Description | 30V Dual P-Channel MOSFET |
| Datasheet | AO4805_ETC.pdf |
|
|
|
The AO4805 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-20V) RDS(ON) (at VGS=-20V) RDS(ON) (at VGS =-10V) 100% UIS Tested 100% Rg Tested -30V -9A < 15mW < 18mW Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -9 -7 -50 33 54 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 7.1: March 2024 www.aosmd.com Page 1 of 5 AO4805 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -50 VGS=-20V, ID=-9A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-8A TJ=125°C VGS=-4.5V, ID=-5A gFS Forward Transconductance VDS=-5V, ID=-9A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current V -1 mA -5 ±100 nA -2.3 -2.8 V A 10 15 mW 12 18 mW 13 20 29 mW 27 S -0.7 -1 V -2.5 A DYNAMI
Compare AO4805 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4805 | Dual P-Channel MOSFET | Kexin |
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AO4805 | Dual P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |
| AO4803A | 30V Dual P-Channel MOSFET |
| AO4806 | 20V Dual N-Channel MOSFET |