Datasheet Details
| Part number | AO4862 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 254.17 KB |
| Description | 30V Dual N-Channel AlphaMOS |
| Datasheet |
 AO4862 Datasheet
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| Part number | AO4862 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 254.17 KB |
| Description | 30V Dual N-Channel AlphaMOS |
| Datasheet |
AO4862 Datasheet
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• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • System switch, inverter Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 4.5A < 50mΩ < 68mΩ Top View SOIC-8 Bottom View D1 D2 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 G2 S1 S2 Pin1 Orderable Part Number AO4862 Package Type SO-8 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10μs TA=25°C TA=70°C VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 4.5 3.5 18 8 3 36 1.7 1.1 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 52 80 Maximum Junction-to-Lead Steady-State RqJL 35 Max 70 100 45 Units °C/W °C/W °C/W Rev 1.1: August 2023 www.aosmd.com Page 1 of 5 AO4862 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=4.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3A gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz Crss Rev
AO4862 30V Dual N-Channel AlphaMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4862 | Dual N-Channel MOSFET | Kexin |
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AO4862 | 30V Dual N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |
| AO4803A | 30V Dual P-Channel MOSFET |
| AO4805 | 30V Dual P-Channel MOSFET |