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AO4906 - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

Key Features

  • VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V).

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Full PDF Text Transcription for AO4906 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO4906. For precise diagrams, and layout, please refer to the original PDF.

AO4906 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4906 uses advanced trench technology to provide excellent RDS...

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on The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4906 is Pbfree (meets ROHS & Sony 259 specifications). AO4906L is a Green Product ordering option. AO4906 and AO4906L are electrically identical. Features VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V,

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Kexin Logo AO4906 Dual N-Channel MOSFET Kexin
VBsemi Logo AO4906 30V Dual N-Channel MOSFET VBsemi

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