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AO4912 - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

Key Features

  • Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ Q2 VDS(V) = 30V ID=7A (VGS = 10V).

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Full PDF Text Transcription for AO4912 (Reference)

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AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4912 uses advanced trench technology to provide excellent R DS(ON) and...

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4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product www.DataSheet4U.com ordering option. AO4912 and AO4912L are electrically identical. Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ Q2 VDS(V) = 30V ID=7A (VGS = 10V) <26mΩ (VGS = 10V) <31mΩ (VGS = 4.5V)

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Kexin Logo AO4912 Dual N-Channel MOSFET Kexin
VBsemi Logo AO4912 Dual N-Channel 30V MOSFET VBsemi

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