AO4912 transistor equivalent, dual n-channel enhancement mode field effect transistor.
Q1
VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ
Q2
VDS(V) = 30V ID=7A (VGS = 10V) <26mΩ (VGS = 10V) <31mΩ (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V.
OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY .
The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in pa.
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