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AO4926 - Dual N-Channel Enhancement Mode Field Effect Transistor

Description

The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC www.DataSheet4U.com converters.

Features

  • FET1 FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ.

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Datasheet preview – AO4926

Datasheet Details

Part number AO4926
Manufacturer Alpha & Omega Semiconductors
File Size 266.54 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO4926 Datasheet
Additional preview pages of the AO4926 datasheet.

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Full PDF Text Transcription

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AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM Features FET1 FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ UIS TESTED! Rg,Ciss,Coss,Crss Tested General Description The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC www.DataSheet4U.com converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4926 is Pb-free (meets ROHS & Sony 259 specifications).
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