Datasheet4U Logo Datasheet4U.com

AO6409A - P-Channel MOSFET

📥 Download Datasheet

Preview of AO6409A PDF
datasheet Preview Page 2 datasheet Preview Page 3

AO6409A Product details

Description

Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.This device is suitable for use as a load switch applications.VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -5.5A < 41mW < 53mW < 65mW TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter

📁 AO6409A Similar Datasheet

  • AO6403 - P-Channel MOSFET (VBsemi)
  • AO6601 - N- and P-Channel 20V MOSFET (VBsemi)
  • AO6604 - Dual-Channel MOSFET (VBsemi)
  • AO6800 - Dual N-Channel MOSFET (VBsemi)
  • AO6800-HF - Dual N-Channel MOSFET (Kexin)
  • AO6801 - Dual P-Channel MOSFET (VBsemi)
  • AO6801A - Dual P-Channel MOSFET (Kexin)
  • AO6802 - N-Channel MOSFET (Freescale)
Other Datasheets by Alpha & Omega Semiconductors
Published: |