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AO6409 - P-Channel MOSFET

Datasheet Summary

Description

The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www. DataSheet4U. com S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -5.0 -4.2 -30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD.

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Datasheet preview – AO6409

Datasheet Details

Part number AO6409
Manufacturer Alpha & Omega Semiconductors
File Size 163.11 KB
Description P-Channel MOSFET
Datasheet download datasheet AO6409 Datasheet
Additional preview pages of the AO6409 datasheet.

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Full PDF Text Transcription

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Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www.DataSheet4U.
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