AOD609G - Complementary Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOD609G
Manufacturer	Alpha & Omega Semiconductors
File Size	524.23 KB
Description	Complementary Enhancement Mode Field Effect Transistor
Datasheet	AOD609G-AlphaOmegaSemiconductors.pdf

The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

es n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V) 100% UIS Tested! 100% Rg Tested! Top View TO-252-4L D-PAK D1/D2 Bottom View Top View Drain Connected to Tab D1/D2 G2 S2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,G TC=.

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Published: May 11, 2020 |