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AON2701 - P-Channel MOSFET

General Description

The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

AON2701 and AON2701L are electrically identical.

Key Features

  • VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS Compliant -Halogen Free* DFN 2x2 Package A NC D Features VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A D A K D G S K Top K G Bottom S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage www.DataSheet.co.kr MOSFET -20 ±8 -3 -2.