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AON6403 - 30V P-Channel MOSFET

Description

The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

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AON6403 30V P-Channel MOSFET General Description The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -85A < 3.1mW < 4.3mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAR Repetitive avalanche energy L=0.
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