Datasheet Details
| Part number | AON6405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 351.16 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON6405 Download (PDF) |
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| Part number | AON6405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 351.16 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON6405 Download (PDF) |
|
|
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• Trench Power MOSFET technology • Low RDS(ON) • ESD Protected • High Current Capability • RoHS and Halogen-Free Compliant Applications • System/Load Switch • Battery Switch • USB-PD Load Switch Top View DFN5X6 Bottom View Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested Top View -30V -30A < 5.2mΩ < 7.6mΩ HBM Class 3B D PIN1 Orderable Part Number AON6405 1 8 2 7 3 6 4 5 PIN1 Package Type DFN 5x6 Form Tape & Reel G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -30 -30 -120 -28 -22.5 54 146 104 41.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 0.9 Max 20 50 1.2 Units °C/W °C/W °C/W Rev.3.0: October 2017 www.aosmd.com Page 1 of 6 AON6405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.2 VGS=-10V, ID=-20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Conti
AON6405 30V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AON6405 | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AON6405L | N-Channel MOSFET |
| AON6400 | N-Channel MOSFET |
| AON6403 | 30V P-Channel MOSFET |
| AON6403L | N-Channel MOSFET |
| AON6404 | N-Channel MOSFET |
| AON6404A | N-Channel MOSFET |
| AON6404L | N-Channel MOSFET |
| AON6406 | 30V N-Channel MOSFET |
| AON6407 | 30V P-Channel MOSFET |
| AON6408 | N-Channel MOSFET |