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AON6812 - 30V Common Drain N-Channel MOSFET

Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Common Drain Application Battery Management Product Summary VDS ID (at VGS=10V) RDS(ON)

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AON6812 AlphaMOS 30V Common Drain N-Channel General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain Application • Battery Management Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
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