Datasheet Details
| Part number | AON7401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.41 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON7401_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7401 30V P-Channel MOSFET General.
| Part number | AON7401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.41 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON7401_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-6V) -30V -29A < 14mΩ < 17mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3x3_EP Bottom View D Top View 1 2 3 4 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Power Dissipation B Power Dissipation A Maximum -30 ±25 -35 -23 -80 -12 -9.7 29 12 3.1 2 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM PD PDSM TJ, TSTG A W W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 30 60 3.5 Max 40 75 4.2 Units ° C/W ° C/W ° C/W Rev 4: Mar.
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