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AON7403 Datasheet 30v P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON7403 30V P-Channel MOSFET General.

General Description

Product Summary The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-5V) -30V -29A < 18mW < 36mW 100% UIS Tested DFN 3x3_EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH C VGS ID IDM IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -29 -18 -80 -11 -8.5 24 29 25 10 4.1 2.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 22 47 4.2 Max 30 60 5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.4.0: November.

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