Datasheet Details
| Part number | AON7405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 316.20 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON7405_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7405 30V P-Channel MOSFET General.
| Part number | AON7405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 316.20 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON7405_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -6V) -30V -50A < 6.2mΩ < 8.9mΩ 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 EP Top View Bottom Pin 1 Top View 1 2 3 4 8 7 6 5 D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B C Maximum -30 ±25 -50 -39 -210 -25 -20 -44 97 83 33 6.25 4 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAR, IAS EAR, EAS PD PDSM TJ, TSTG A A mJ W W ° C TC=100° C TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 Units ° C/W ° C/W ° C/W Rev 1: Feb 2010 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7405 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=-6V, ID=-20A VGS=-4.5V, ID=-10A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-20A IS=-1A,VGS=0V G Min -30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±100 -1.7 -210 5.1 7.6 7.1 10.7 4
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|---|---|---|---|
 |
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