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AONP36336 - Dual Asymmetric N-Channel MOSFET

General Description

Bottom source technology Very Low RDS(ON) at Vgs 4.5V Low Gate Charge High Current Capability RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 50A 50A < 4.7mΩ < 5.8

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AONP36336 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom source technology • Very Low RDS(ON) at Vgs 4.5V • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 50A 50A < 4.7mΩ < 5.8mΩ < 5.7mΩ < 7.3mΩ Applications • Buck-boost Converters in Computing • Point of Load Converter • See Note I 100% UIS Tested 100% Rg Tested DFN3.3x3.3B Top View Q1 Bottom View Pin 1 Q2 Pin 1 Orderable Part Number AONP36336 Package Type DFN3.3x3.