Datasheet Details
| Part number | AONR21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 632.46 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONR21311C-AlphaOmegaSemiconductors.pdf |
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Overview: AONR21311C 30V P-Channel MOSFET General.
| Part number | AONR21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 632.46 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONR21311C-AlphaOmegaSemiconductors.pdf |
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• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in load switch • Battery protection charge/discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -12A < 40mΩ < 61mΩ HBM Class 1C DFN 3x3 EP Top View Bottom View Top View D PIN 1 S1 S2 S3 G4 PIN 1 8D 7D 6D G 5D S Orderable Part Number AONR21311C Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current G TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -12 -8.3 -48 -7 -5.5 13 8 11 4.5 3.1 2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 25 62 Maximum Junction-to-Case Steady-State RqJC 8.8 Max 40 75 11 Units °C/W °C/W °C/W Rev.1.0: July 2020 www.aosmd.com Page 1 of 6 AONR21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 VGS=-10V, ID=-7A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-5.7A gFS Forward Transconductance VDS=-5V, ID=-7A VSD Diode Forward Voltage IS=-1A, VGS=0V IS
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