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AOU438 - N-Channel MOSFET

Description

The AOU438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Standard Product AOU438 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C Maximum 30 ±20 85 63 200 30 112 100 50 -55 to 175 Units V V A A mJ W °C TC=25°C G TC=10.

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www.DataSheet4U.com AOU438 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU438 is Pb-free (meets ROHS & Sony 259 specifications). AOU438L is a Green Product ordering option. AOU438 and AOU438L are electrically identical . Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 4.
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