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AOU408 - N-Channel MOSFET

Datasheet Summary

Description

The AOU408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications.

Features

  • VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mΩ (VGS =10V) @ 20A RDS(ON) < 31 mΩ (VGS = 6V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 105 ±25 40 28 100 20 200 100 50 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche ener.

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Datasheet Details

Part number AOU408
Manufacturer Alpha & Omega Semiconductors
File Size 100.77 KB
Description N-Channel MOSFET
Datasheet download datasheet AOU408 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AOU408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOU408 is Pbfree (meets ROHS & Sony 259 specifications). AOU408L is a Green Product ordering option. AOU408 and AOU408L are electrically identical.
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