Datasheet4U Logo Datasheet4U.com

AOU417 - P-Channel MOSFET

Datasheet Summary

Description

The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard product AOU417 is Pbfree (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Ther.

📥 Download Datasheet

Datasheet preview – AOU417

Datasheet Details

Part number AOU417
Manufacturer Alpha & Omega Semiconductors
File Size 151.90 KB
Description P-Channel MOSFET
Datasheet download datasheet AOU417 Datasheet
Additional preview pages of the AOU417 datasheet.

📁 Similar Datasheet

  • AOU4N60 - N-Channel MOSFET (INCHANGE)
  • AOU4S60 - N-Channel MOSFET (INCHANGE)
  • AOU1N60 - N-Channel MOSFET (INCHANGE)
  • AOU2N60 - N-Channel MOSFET (INCHANGE)
  • AOU2N60A - 2A N-Channel MOSFET (INCHANGE)
  • AOU3N50 - N-Channel MOSFET (INCHANGE)
  • AOU3N60 - N-Channel MOSFET (INCHANGE)
  • AOU7S65 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com AOU417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AOU417 is Pbfree (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
Published: |