AOU417 Datasheet P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: www.DataSheet4U.com AOU417 P-Channel Enhancement Mode Field Effect.

Datasheet Details

The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard product AOU417 is Pbfree (meets ROHS & Sony 259 specifications).

VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Ther.