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AOU412 - N-Channel MOSFET

Datasheet Summary

Description

The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C Maximum 30 ±20 85 65 200 30 120 100 50 -55 to 175 Units V V A A mJ W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD TJ, TSTG TC=100°C.

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Datasheet Details

Part number AOU412
Manufacturer Alpha & Omega Semiconductors
File Size 101.49 KB
Description N-Channel MOSFET
Datasheet download datasheet AOU412 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AOU412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications). AOU412L is a Green Product ordering option. AOU412 and AOU412L are electrically identical. TO-251 D Top View Drain Connected to Tab Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.
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