Datasheet Details
| Part number | AOW292 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 389.02 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AOW292 Datasheet
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| Part number | AOW292 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 389.02 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AOW292 Datasheet
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100V 105A < 4.1mΩ < 4.9mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-262 D Top View Bottom View D D GDS SDG Orderable Part Number AOW292 Package Type TO-262 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 55 0.35 G Form Tube S Minimum Order Quantity 1000 Maximum 100 ±20 105 105 420 14.5 11.5 60 180 120 300 150 1.9 1.2 -55 to 175 Units V V A A A mJ V W W °C Max Units 20 °C/W 65 °C/W 0.5 °C/W Rev.2.0: August 2020 www.aosmd.com Page 1 of 6 AOW292 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYN
AOW292 100V N-Channel MOSFET General.
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|---|---|---|---|
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