AO4435
Description
.. provide
Features
VDS = -30V ID = -10A (VGS = -10V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V)
The AO4435 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications).
SOIC-8 Top View S S S G D D D D G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±25 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
-10 -8 -80 3.1 2.0 -55 to 150
-8 -6 1.7 1.1
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
Symbol
A A t ≤ 10s Steady State Steady State
RθJA RθJL
Typ 32 60...
