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BLF888ES - Power LDMOS transistor

Download the BLF888ES datasheet PDF (BLF888E included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power ldmos transistor.

Description

A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • Designed for asymmetric Doherty operation.
  • Very high efficiency enabling air cooled high power transmitters.
  • Integrated ESD protection.
  • Excellent ruggedness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF888E-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF888ES
Manufacturer Ampleon
File Size 615.63 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF888ES Datasheet

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Full PDF Text Transcription

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BLF888E; BLF888ES UHF power LDMOS transistor Rev. 2 — 30 August 2016 Product data sheet 1. Product profile 1.1 General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an asymmetrical Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 608 150 17 52 600 to 700 150 17 50 650 to 790 150 15 49 IMDshldr (dBc) 38 38 38 PAR (dB) 8 [1] 8 [1] 8 [1] [1] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.
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