Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.
Features
- z VDS =60 V z ID =100A z Typical RDS(ON) =4.5 m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD TJ,Tstg TL
Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose
（.
BF9060BSNL-BYD.pdf
