BF960NF06 Datasheet N-Channel MOSFET

Manufacturer: BYD

BF960NF06 n-channel mosfet by BYD - Datasheet Preview

Datasheet Details

Part number	BF960NF06
Manufacturer	BYD
File Size	242.23 KB
Description	N-Channel MOSFET
Download	BF960NF06 Download (PDF)

General Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

It is also intended for any application with low gate drive requirement.

Overview

BYD Microelectronics Co., Ltd.

BF960NF06 60V N-Channel MOSFET.

Key Features

z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg TL Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （No.

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