• Part: BSS123
  • Description: N-Channel ENHANCEMENT MODE MOSFET
  • Manufacturer: Bruckewell Technology
  • Size: 377.80 KB
Download BSS123 Datasheet PDF
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Datasheet Summary

N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as: - Small Servo Motor Control - Power MOSFET Gate Drivers - Switching Applications Features - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - High Drain-Source Voltage Rating - RoHS pliant package Mechanical Data - Case Material: Molded Plastic. UL...