Datasheet4U Logo Datasheet4U.com

BSS123 - N-Channel ENHANCEMENT MODE MOSFET

Description

transistors uses advanced trench technology.

switching performance.

Features

  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • High Drain-Source Voltage Rating.
  • RoHS compliant package Mechanical Data.
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe(Lead Free Plating). Solderable per MIL-STD-202, Method 208.

📥 Download Datasheet

Datasheet Details

Part number BSS123
Manufacturer Bruckewell
File Size 377.80 KB
Description N-Channel ENHANCEMENT MODE MOSFET
Datasheet download datasheet BSS123 Datasheet

📁 Similar Datasheet

  • BSS123 - N-Channel MOSFET (JCET)
  • BSS123 - N-channel transistor Logic level FET (NXP)
  • BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild Semiconductor)
  • BSS123 - SIPMOS Small Signal Transistor (Infineon Technologies AG)
  • BSS123 - N-CHANNEL POWER MOSFET (UTC)
  • BSS123 - 100V N-Channel Enhancement Mode MOSFE (PAN JIT)
  • BSS123 - N-Channel 100V MOSFET (LITE-ON)
  • BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)
  • BSS123 - SMD Power MOSFET Transistor (TAITRON)
  • BSS123 - N-Channel MOSFET (MCC)
Other Datasheets by Bruckewell
  • BSS84 - P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as: • Small Servo Motor Control • Power MOSFET Gate Drivers • Switching Applications Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • RoHS compliant package Mechanical Data • Case Material: Molded Plastic.
Published: |