MS10N65SJ mosfet equivalent, n-channel mosfet.
* Low RDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
FEATURES
* Low RDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switch.
The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all com.
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