MS10N65SJ - N-Channel MOSFET

Name: MS10N65SJ
SKU: MS10N65SJ-1009543

Bruckewell

📥 Download Datasheet

MS10N65SJ Datasheet Preview — Preview of MS10N65SJ PDF

Datasheet Details

Part number	MS10N65SJ
Manufacturer	Bruckewell
File Size	738.66 KB
Description	N-Channel MOSFET
Datasheet	MS10N65SJ-Bruckewell.pdf

MS10N65SJ Product details

Description

The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness.

Features

Low RDS(on).
Ultra Low Gate Charge.
High dv/dt capability.
High Unclamped Inductive Switching (UIS) capability.
High peak current capability.
Increased transconductance performance.
Optimized design for high performance power systems Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt ruggedness G.

📁 MS10N65SJ Similar Datasheet

MS1000 - RF & MICROWAVE TRANSISTORS (Advanced Power Technology)
MS1000L - Single axis analog accelerometer (SAFRAN)
MS1000T - Single axis analog accelerometer (SAFRAN)
MS1001 - RF & MICROWAVE TRANSISTORS (Advanced Power Technology)
MS1003 - 10 AMP SCHOTTKY BARRIER RECTIFIERS (Microsemi Corporation)
MS1003SH - Quasi-Resonant Power Supply (Shindengen)
MS1004 - 10 AMP SCHOTTKY BARRIER RECTIFIERS (Microsemi Corporation)
MS1004SH - Quasi-Resonant Power Supply (Shindengen)

Other Datasheets by Bruckewell

MS10N65 - N-Channel MOSFET
MS10N60 - N-Channel MOSFET
MS10N80 - N-Channel MOSFET
MS12N60 - N-Channel MOSFET
MS12N65 - N-Channel MOSFET
MS13N30 - N-Channel MOSFET

Published: Jun 1, 2016 |