MSW9N90 mosfet equivalent, 900v n-channel mosfet.
* RDS(on) (Max 1.4 Ω )@VGS=10V
* Gate Charge (Typical 45nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Te.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features
* RDS(on) (Max 1.4 Ω )@VGS=1.
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