MSW9N90 Overview
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
MSW9N90 Key Features
- RDS(on) (Max 1.4 Ω )@VGS=10V
- Gate Charge (Typical 45nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150˚C)
- RoHS pliant package Package type：TO-247 Packing &