Click to expand full text
N-Channel Trench Power MOSFET
CSD40N160
General Description
The CSD40N160 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
● VDS = 40V,ID =30A RDS(ON) < 20mΩ @ VGS =10V RDS(ON) < 34mΩ @ VGS =4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● PWM applications ● Load switch ● Power management
100% UIS TESTED! 100% ΔVds TESTED!
Schematic Diagram Marking and pin Assignment
TO-252(DPAK) top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD40N160
CSD40N160
TO-252
Reel Size 325mm
Table 1.
CSD40N160 Datasheet
