• Part: 2SC3357
  • Manufacturer: CEL
  • Size: 195.46 KB
Download 2SC3357 Datasheet PDF
2SC3357 page 2
Page 2
2SC3357 page 3
Page 3

2SC3357 Key Features

  • Low noise and high gain
  • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
  • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.7 mm (t) ceramic substrate)
  • Small package : 3-pin power minimold package
  • 12 mm wide embossed taping
  • Collector face the perforation side of the tape

2SC3357 Description

NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD.