2SC3357 Datasheet and Specifications PDF

The 2SC3357 is available in SOT-89 package. ORDERING INFORMATION Package Type Part Number 2SC3357-A 2SC3357-B SOT-89 2SC3357-C 2SC3357-D 2SC3357-E Note SPQ: 1,000pcs/Reel AiT provides all .

High gain: S21e︱2 TYP. Value : 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value: 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.): TYP. Value: 6.5GHz @ VCE=10V，IC=20mA，f=1GHz PIN DESCRIPTION PIN# 1 2 3 SOT-89 DESCRIPTION BASE COLLECTOR EMITTER HFE CLASSIFICATION Classification A B C D E hFE 60~100.

·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ·100% avalanche tested ·Minimum .

BO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain
*Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 10V;f=.

2SCS3M35D7 Type NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot 3 2 1 1.Base 2.Collector 3.Emitter ■ Simplified outline(SOT-89) ■ Absolute Maximum Ratings .

* Low noise and high gain
* High power gain
* Large Ptot 3 2 1 1.Base 2.Collector 3.Emitter
* Simplified outline(SOT-89)
* Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Di.

Product Specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD FEATURES  Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga =.

* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
* Large PT in Small Package PT : 2 W with 16 cm2*
* RoHS compliant with Halogen-free 2SC3357 APPLICATIONS
* The 2SC3357 is an NPN silicon epitaxial trans.