NE350184C Datasheet - CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

* Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz

* Micro-X ceramic (84C) package APPLICATIONS

* 20 GHz-band DBS LNB

* Other K-band communication systems ORDERING INFORMATION Part Number NE350184C-T1 NE350184C-T1A Ord

NE350184C

CEL

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Hetero junction field effect transistor k-band super low noise amplifier n-channel hj-fet.

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