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CEH2288 Datasheet Preview

CEH2288 Datasheet

N-Channel MOSFET

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CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23m@VGS = 4.5V.
RDS(ON) = 30m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G1(6)
D1(2)
G2(4)
S1(1)
D2(5)
S2(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 5.2
IDM 20
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2013.April
http://www.cetsemi.com




CET

CEH2288 Datasheet Preview

CEH2288 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 5.2A,
VGS = 5V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 5.2A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 5.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CEH2288
Min Typ Max Units
20 V
1 µA
100 nA
-100 nA
0.4 1.0 V
17 23 m
21 30 m
760 pF
120 pF
85 pF
20 ns
19 ns
42 ns
9 ns
10 nC
1.5 nC
3 nC
5.2 A
1.2 V
2


Part Number CEH2288
Description N-Channel MOSFET
Maker CET
Total Page 4 Pages
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