CS13N10AQ3-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤68 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
The package form is PDFN5×6, which accords with the Halogen Free standard.
Features：
* Fast Switching
* Low ON .
CS13N10 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load sw.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 881.25KB)