l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data: 9.4nC) l Low Reverse transfer capacitances(Typical:16.2 pF) l 100% Single Pulse avalan.

Power switch circuit of adaptor and charger. Absolute（ TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

VDSS 600 V CS2N60 B23HP, the silicon N-channel Enhanced ID 1.5 A VDMOSFETs, is obtained by the self-aligned planar PD (TA=25℃) 4.5 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7 Ω switching performance and enhance.

CS2N60

CS2N60A23H

CS2N60A3H

CS2N60A4H

CS2N60A4HY

CS2N60A4R

CS2N60A4RZ-G

CS2N60A4T

CS2N60A7H

CS2N60F

CS2N60FA9H

CS2N65A3

CS2N65A3HY