* Fast Switching
* Low ON Resistance(Rdson≤1.0Ω)
* Low Gate Charge (Typical Data:29nC)
* Low Reverse transfer capacitances(Typical:6.6pF)
* 100%.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS8N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p.

CS8N65FA9H

CS8N65F

CS8N65A0H

CS8N65A4R-G

CS8N65A8H

CS8N65ARR

CS8N60

CS8N60A8D

CS8N60A8H

CS8N60ARD

CS8N60F

CS8N60FA9D

CS8N60FA9H