CS8N65FA9R-G Datasheet | CR Micro

Description ： CS8N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤1.0Ω) - Low Gate Charge (Typical Data:29n C) - Low Reverse transfer capacitances(Typical:6.6p F) - 100% Single Pulse avalanche energy Test - Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS ID PD(TC=25℃) RDS(ON)Typ 650 8 38 Rating 650 8 5 32 ±30 500 5.0 38 0.3 150，- 55 to 150 300 V A W Ω Units V A A A V m J V/ns W W/℃ ℃ ℃ WUXI CHINA RE SOURCES HUAJING MICROELECT RONICS CO., LTD. Page 1 of 10 2016V01 CS8N65F A9R-G ○R Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test...