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CT816 - Phototransistor Optocoupler

Description

The CT816 series consists of a photo transistor optically coupled to a gallium arsenide Infraredemitting diode in a 4-lead DIP package with bending options.

Switch mode power supplies Computer peripheral interface Microprocessor system interface Package Outline Schem

Features

  • High isolation 5000 VRMS.
  • CTR flexibility available see order information.
  • DC input with transistor output.
  • External Creepage ≥ 7.4mm.
  • Distance Through Isolation ≥ 0.4mm.
  • Spatial Distance ≥ 7.5mm (S/SL Type).
  • Spatial Distance ≥ 8.0mm (M/SLM Type).
  • Operating Temperature range - 55 °C to 110 °C.
  • Regulatory Approvals.
  • UL - UL1577 (E364000).
  • VDE - EN60747-5-5(VDE0884-5).
  • CQC.
  • GB4943.1, GB8898.
  • IEC60065, IEC60950.

📥 Download Datasheet

Datasheet Details

Part number CT816
Manufacturer CT Micro
File Size 1.58 MB
Description Phototransistor Optocoupler
Datasheet download datasheet CT816 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT816 Series DC Input 4-Pin Phototransistor Optocoupler Features  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Spatial Distance ≥ 7.5mm (S/SL Type)  Spatial Distance ≥ 8.0mm (M/SLM Type)  Operating Temperature range - 55 °C to 110 °C  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB8898  IEC60065, IEC60950 Description The CT816 series consists of a photo transistor optically coupled to a gallium arsenide Infraredemitting diode in a 4-lead DIP package with bending options.
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