CEG9926 transistor equivalent, dual n-channel enhancement mode field effect transistor.
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 f.
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