CEP05P03 Features
* -30V, -18A,RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE
CEP05P03, CEP05P03_Chino Datasheet
Datasheet Details
CEP05P03, CEP05P03_Chino
Chino-Excel Technology
113.83 KB
P-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEP05P03, CEP05P03_Chino.
Please refer to the document for exact specifications by model.
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CEP05P03 Distributor
